Transistor Type:
NPN
Dimensions:
4.58 x 3.86 x 4.58mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
1 W
Maximum Collector Emitter Saturation Voltage:
0.5 V
Maximum Collector Base Voltage:
30 V
Maximum Collector Emitter Voltage:
25 V
Maximum Emitter Base Voltage:
3 V
Package Type:
TO-92
Number of Elements per Chip:
1
Maximum DC Collector Current:
50 mA
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
39 Weeks
Base Part Number:
KSP10
Detailed Description:
RF Transistor NPN 25V 650MHz 350mW Through Hole TO-92-3
Transistor Type:
NPN
Frequency - Transition:
650MHz
Mounting Type:
Through Hole
Supplier Device Package:
TO-92-3
Voltage - Collector Emitter Breakdown (Max):
25V
Packaging:
Bulk
Operating Temperature:
150°C (TJ)
Power - Max:
350mW
Customer Reference:
Package / Case:
TO-226-3, TO-92-3 (TO-226AA)
DC Current Gain (hFE) (Min) @ Ic, Vce:
60 @ 4mA, 10V
Manufacturer:
ON Semiconductor
