ON Semiconductor EC3H02BA-TL-H

EC3H02BA-TL-H ON Semiconductor
ON Semiconductor

Product Information

Base Part Number:
EC3H02
Detailed Description:
RF Transistor NPN 10V 70mA 7GHz 100mW Surface Mount 3-ECSP1006
Noise Figure (dB Typ @ f):
1dB @ 1GHz
Transistor Type:
NPN
Frequency - Transition:
7GHz
Mounting Type:
Surface Mount
Current - Collector (Ic) (Max):
70mA
Customer Reference:
Supplier Device Package:
3-ECSP1006
Voltage - Collector Emitter Breakdown (Max):
10V
Packaging:
Tape & Reel (TR)
Operating Temperature:
150°C (TJ)
Power - Max:
100mW
Gain:
8.5dB
Package / Case:
3-XFDFN
DC Current Gain (hFE) (Min) @ Ic, Vce:
120 @ 20mA, 5V
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is EC3H02BA-TL-H. Base Part Number: ec3h02. It features rf transistor npn 10v 70ma 7ghz 100mw surface mount 3-ecsp1006. It has given noise figure of 1db @ 1ghz at given frequency. The transistor is a npn type. The transition frequency of the product is 7ghz. The product is available in surface mount configuration. The maximum collector current includes 70ma. 3-ecsp1006 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 10v. In addition, tape & reel (tr) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 100mw. The 8.5db is the gain value of a bespoke product. Moreover, the product comes in 3-xfdfn. Furthermore, 120 @ 20ma, 5v is the minimum DC current gain at given voltage. The on semiconductor's product offers user-desired applications.

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EC3H02BA(Datasheets)

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