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United Kingdom
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is HN3C10FUTE85LF. The maximum collector current includes 80ma. It is assigned with possible HTSUS value of 8541.21.0095. The product is rohs compliant. Moreover, the product comes in 6-tssop, sc-88, sot-363. Furthermore, 80 @ 20ma, 10v is the minimum DC current gain at given voltage. It has given noise figure of 1.1db @ 1ghz at given frequency. The transition frequency of the product is 7ghz. The maximum collector emitter breakdown voltage of the product is 12v. The 11.5db is the gain value of a bespoke product. The transistor is a 2 npn (dual) type. It is shipped in tape & reel (tr) package . Its typical moisture sensitivity level is 1 (unlimited). The product is available in surface mount configuration. us6 is the supplier device package value. The maximum power of the product is 200mw. Moreover, it corresponds to hn3c10, a base product number of the product. The product is designated with the ear99 code number.
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