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This is manufactured by NXP USA Inc.. The manufacturer part number is BFU660F,115. The maximum collector current includes 60ma. It is assigned with possible HTSUS value of 8541.21.0075. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 5.5v. The product has 150°c (tj) operating temperature range. Moreover, the product comes in sot-343f. Furthermore, 90 @ 10ma, 2v is the minimum DC current gain at given voltage. It has given noise figure of 0.6db ~ 1.2db @ 1.5ghz ~ 5.8ghz at given frequency. The transition frequency of the product is 21ghz. In addition, it is reach unaffected. The 12db ~ 21db is the gain value of a bespoke product. The transistor is a npn type. It is shipped in tape & reel (tr) package . Its typical moisture sensitivity level is 1 (unlimited). It has a long 26 weeks standard lead time. The product is available in surface mount configuration. 4-dfp is the supplier device package value. The maximum power of the product is 225mw. Moreover, it corresponds to bfu660, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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