Transistor Type:
NPN
Dimensions:
3.04 x 1.4 x 1.01mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
225 mW
Maximum Collector Emitter Saturation Voltage:
0.5 V dc
Maximum Collector Base Voltage:
30 V dc
Maximum Collector Emitter Voltage:
25 V
Maximum Base Emitter Saturation Voltage:
0.95 V dc
Maximum Operating Frequency:
100 MHz
Maximum Emitter Base Voltage:
3 V
Package Type:
SOT-23
Number of Elements per Chip:
1
Maximum DC Collector Current:
4 mA
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
18 Weeks
Base Part Number:
MMBTH10
Detailed Description:
RF Transistor NPN 25V 650MHz 225mW Surface Mount SOT-23-3 (TO-236)
Transistor Type:
NPN
Frequency - Transition:
650MHz
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-23-3 (TO-236)
Voltage - Collector Emitter Breakdown (Max):
25V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
225mW
Customer Reference:
Package / Case:
TO-236-3, SC-59, SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
60 @ 4mA, 10V
Manufacturer:
ON Semiconductor
