ON Semiconductor MMBTH10-4LT1G

MMBTH10-4LT1G ON Semiconductor
ON Semiconductor

Product Information

Automotive Standard:
AEC-Q101
Minimum DC Current Gain:
60
Transistor Type:
NPN
Dimensions:
3.04 x 1.4 x 1.01mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
300 mW
Maximum Collector Emitter Saturation Voltage:
0.5 V dc
Maximum Collector Emitter Voltage:
25 V dc
Height:
1.01mm
Width:
1.4mm
Length:
3.04mm
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Emitter Base Voltage:
3 V dc
Configuration:
Single
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
30 Weeks
Base Part Number:
MMBTH10
Detailed Description:
RF Transistor NPN 25V 800MHz 225mW Surface Mount SOT-23-3 (TO-236)
Transistor Type:
NPN
Frequency - Transition:
800MHz
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-23-3 (TO-236)
Voltage - Collector Emitter Breakdown (Max):
25V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
225mW
Customer Reference:
Package / Case:
TO-236-3, SC-59, SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
120 @ 4mA, 10V
Manufacturer:
ON Semiconductor
RoHs Compliant
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This is manufactured by ON Semiconductor. The manufacturer part number is MMBTH10-4LT1G. The product complies with automotive standard - aec-q101. It features up to 60 of minimum DC current gain. The transistor is a npn type. The given dimensions of the product include 3.04 x 1.4 x 1.01mm. The product is available in surface mount configuration. Provides up to 300 mw maximum power dissipation. The product has a maximum 0.5 v dc collector emitter saturation voltage . Whereas features a 25 v dc of collector emitter voltage (max). In addition, the height is 1.01mm. Furthermore, the product is 1.4mm wide. Its accurate length is 3.04mm. The package is a sort of sot-23. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. It features a 3 v dc of maximum emitter base voltage. The product is available in single configuration. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It has typical 30 weeks of manufacturer standard lead time. Base Part Number: mmbth10. It features rf transistor npn 25v 800mhz 225mw surface mount sot-23-3 (to-236). The transition frequency of the product is 800mhz. sot-23-3 (to-236) is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 25v. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 225mw. Moreover, the product comes in to-236-3, sc-59, sot-23-3. Furthermore, 120 @ 4ma, 10v is the minimum DC current gain at given voltage. The on semiconductor's product offers user-desired applications.

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Datasheet MMBTH10-4LT1G(Technical Reference)
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Mold Compound 08/Sep/2019(PCN Assembly/Origin)
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NSV,S,MMBTH10L(4L)(Datasheets)
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Glue Mount Process 11/July/2008(PCN Design/Specification)
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SOT23 16/Sep/2016(PCN Design/Specification)

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FAQs

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Yes. We ship MMBTH10-4LT1G Internationally to many countries around the world.