Transistor Type:
NPN
Dimensions:
4.5 x 2.5 x 1.5mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
800 mW
Maximum Collector Base Voltage:
20 V
Maximum Collector Emitter Voltage:
12 V
Maximum Operating Frequency:
8 GHz
Maximum Emitter Base Voltage:
2 V
Package Type:
PCP
Number of Elements per Chip:
1
Maximum DC Collector Current:
100 mA
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
2SC5415
Detailed Description:
RF Transistor NPN 12V 100mA 6.7GHz 800mW Surface Mount PCP
Noise Figure (dB Typ @ f):
1.1dB @ 1GHz
Transistor Type:
NPN
Frequency - Transition:
6.7GHz
Mounting Type:
Surface Mount
Current - Collector (Ic) (Max):
100mA
Customer Reference:
Supplier Device Package:
PCP
Voltage - Collector Emitter Breakdown (Max):
12V
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
Power - Max:
800mW
Gain:
9dB
Package / Case:
TO-243AA
DC Current Gain (hFE) (Min) @ Ic, Vce:
90 @ 30mA, 5V
Manufacturer:
ON Semiconductor
