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This is manufactured by Microsemi Corporation. The manufacturer part number is JAN2N4957. The maximum collector current includes 30ma. It features rf transistor pnp 30v 30ma 200mw through hole to-72. It has given noise figure of 3.5db @ 450mhz at given frequency. The transistor is a pnp type. The product is available in through hole configuration. Note: qpl or military specs are for reference only. parts are not for military use. see terms and conditions.. to-72 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 30v. In addition, bulk is the available packaging type of the product. The product has -65°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 200mw. The 25db is the gain value of a bespoke product. Moreover, the product comes in to-72-3 metal can. Furthermore, 30 @ 5ma, 10v is the minimum DC current gain at given voltage. The microsemi corporation's product offers user-desired applications.
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