NXP USA Inc. PBSS5130PAP,115

PBSS5130PAP-115 NXP USA Inc. PBSS5130PAP,115
NXP USA Inc.

Product Information

Current - Collector (Ic) (Max):
1A
HTSUS:
8541.29.0075
Operating Temperature:
150°C (TJ)
Package / Case:
6-UFDFN Exposed Pad
DC Current Gain (hFE) (Min) @ Ic, Vce:
170 @ 500mA, 2V
Frequency - Transition:
125MHz
Vce Saturation (Max) @ Ib, Ic:
280mV @ 50mA, 1A
Voltage - Collector Emitter Breakdown (Max):
30V
Transistor Type:
2 PNP (Dual)
Package:
Bulk
Current - Collector Cutoff (Max):
100nA (ICBO)
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
6-HUSON (2x2)
Power - Max:
510mW
Base Product Number:
PBSS5130
ECCN:
EAR99
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This is manufactured by NXP USA Inc.. The manufacturer part number is PBSS5130PAP,115. The maximum collector current includes 1a. It is assigned with possible HTSUS value of 8541.29.0075. The product has 150°c (tj) operating temperature range. Moreover, the product comes in 6-ufdfn exposed pad. Furthermore, 170 @ 500ma, 2v is the minimum DC current gain at given voltage. The transition frequency of the product is 125mhz. The 280mv @ 50ma, 1a is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 30v. The transistor is a 2 pnp (dual) type. It is shipped in bulk package . In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in surface mount configuration. 6-huson (2x2) is the supplier device package value. The maximum power of the product is 510mw. Moreover, it corresponds to pbss5130, a base product number of the product. The product is designated with the ear99 code number.

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We use our internationally recognized delivery partners UPS/DHL. Collection of ET22561409 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "NXP USA Inc." products on our website by using Enrgtech's Unique Manufacturing Part Number ET22561409.
Yes. We ship PBSS5130PAP,115 Internationally to many countries around the world.