NXP USA Inc. PBSS4350SPN,115

PBSS4350SPN-115 NXP USA Inc. PBSS4350SPN,115
NXP USA Inc.

Product Information

Current - Collector (Ic) (Max):
2.7A
HTSUS:
8541.21.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
50V
Operating Temperature:
150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
DC Current Gain (hFE) (Min) @ Ic, Vce:
300 @ 1A, 2V / 180 @ 1A, 2V
Frequency - Transition:
-
Vce Saturation (Max) @ Ib, Ic:
340mV @ 270mA, 2.7A / 370mV @ 270mA, 2.7A
REACH Status:
REACH Unaffected
Transistor Type:
NPN, PNP
Package:
Bulk
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
100nA
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-SOIC
Power - Max:
750mW
Base Product Number:
PBSS4350
ECCN:
EAR99
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This is manufactured by NXP USA Inc.. The manufacturer part number is PBSS4350SPN,115. The maximum collector current includes 2.7a. It is assigned with possible HTSUS value of 8541.21.0095. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 50v. The product has 150°c (tj) operating temperature range. Moreover, the product comes in 8-soic (0.154", 3.90mm width). Furthermore, 300 @ 1a, 2v / 180 @ 1a, 2v is the minimum DC current gain at given voltage. The 340mv @ 270ma, 2.7a / 370mv @ 270ma, 2.7a is the maximum Vce saturation. In addition, it is reach unaffected. The transistor is a npn, pnp type. It is shipped in bulk package . Its typical moisture sensitivity level is 1 (unlimited). In addition, 100na is the maximum current at collector cutoff. The product is available in surface mount configuration. 8-soic is the supplier device package value. The maximum power of the product is 750mw. Moreover, it corresponds to pbss4350, a base product number of the product. The product is designated with the ear99 code number.

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