NXP Semiconductors PBSS4230PAN,115

PBSS4230PAN-115 NXP Semiconductors PBSS4230PAN,115
NXP Semiconductors

Product Information

Current - Collector (Ic) (Max):
2A
Transistor Type:
-
HTSUS:
0000.00.0000
Mounting Type:
Surface Mount
Package:
Bulk
Current - Collector Cutoff (Max):
100nA (ICBO)
Series:
-
Vce Saturation (Max) @ Ib, Ic:
290mV @ 200mA, 2A
Operating Temperature:
150°C (TJ)
Supplier Device Package:
6-HUSON-EP (2x2)
Power - Max:
510mW
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 1A, 2V
Package / Case:
6-UDFN Exposed Pad
Frequency - Transition:
120MHz
Voltage - Collector Emitter Breakdown (Max):
30V
Base Product Number:
PBSS4230
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This is manufactured by NXP Semiconductors. The manufacturer part number is PBSS4230PAN,115. The maximum collector current includes 2a. It is assigned with possible HTSUS value of 0000.00.0000. The product is available in surface mount configuration. It is shipped in bulk package . In addition, 100na (icbo) is the maximum current at collector cutoff. The 290mv @ 200ma, 2a is the maximum Vce saturation. The product has 150°c (tj) operating temperature range. 6-huson-ep (2x2) is the supplier device package value. The maximum power of the product is 510mw. Furthermore, 200 @ 1a, 2v is the minimum DC current gain at given voltage. Moreover, the product comes in 6-udfn exposed pad. The transition frequency of the product is 120mhz. The maximum collector emitter breakdown voltage of the product is 30v. Moreover, it corresponds to pbss4230, a base product number of the product.

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