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This is manufactured by onsemi. The manufacturer part number is NJX1675PDR2G. The maximum collector current includes 3a. It is assigned with possible HTSUS value of 8541.29.0075. The maximum collector emitter breakdown voltage of the product is 30v. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-soic (0.154", 3.90mm width). Furthermore, 180 @ 1a, 2v is the minimum DC current gain at given voltage. The transition frequency of the product is 100mhz, 120mhz. In addition, it is reach unaffected. The onsemi's product offers user-desired applications. The transistor is a 1 npn, 1 pnp type. The 115mv @ 200ma, 2a / 170mv @ 200ma, 2a is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in surface mount configuration. 8-soic is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The maximum power of the product is 2w. Moreover, it corresponds to njx16, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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