Rohm Semiconductor EMZ52T2R

EMZ52T2R Rohm Semiconductor
Rohm Semiconductor

Product Information

Base Part Number:
EMZ52
Detailed Description:
Bipolar (BJT) Transistor Array NPN, PNP 50V 100mA 350MHz, 300MHz 150mW Surface Mount EMT6
DC Current Gain (hFE) (Min) @ Ic, Vce:
120 @ 1mA, 6V
Transistor Type:
NPN, PNP
Frequency - Transition:
350MHz, 300MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
300mV @ 5mA, 50mA, 400mV @ 5mA, 50mA
Supplier Device Package:
EMT6
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
Power - Max:
150mW
Customer Reference:
Package / Case:
SOT-563, SOT-666
Current - Collector (Ic) (Max):
100mA
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
Rohm Semiconductor
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This is manufactured by Rohm Semiconductor. The manufacturer part number is EMZ52T2R. Base Part Number: emz52. It features bipolar (bjt) transistor array npn, pnp 50v 100ma 350mhz, 300mhz 150mw surface mount emt6. Furthermore, 120 @ 1ma, 6v is the minimum DC current gain at given voltage. The transistor is a npn, pnp type. The transition frequency of the product is 350mhz, 300mhz. The product is available in surface mount configuration. The 300mv @ 5ma, 50ma, 400mv @ 5ma, 50ma is the maximum Vce saturation. emt6 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 150mw. Moreover, the product comes in sot-563, sot-666. The maximum collector current includes 100ma. In addition, 100na (icbo) is the maximum current at collector cutoff. The rohm semiconductor's product offers user-desired applications.

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EMZ52(Datasheets)

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