Microsemi Corporation JANTX2N5796U

JANTX2N5796U Microsemi Corporation
Microsemi Corporation

Product Information

Current - Collector (Ic) (Max):
600mA
Detailed Description:
Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 600mA 600mW Surface Mount 6-SMD
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 150mA, 10V
Transistor Type:
2 PNP (Dual)
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
1.6V @ 50mA, 500mA
Series:
Military, MIL-PRF-19500/496
Package / Case:
6-SMD, No Lead
Supplier Device Package:
6-SMD
Voltage - Collector Emitter Breakdown (Max):
60V
Packaging:
Bulk
Operating Temperature:
-65°C ~ 175°C (TJ)
Power - Max:
600mW
Customer Reference:
Notification:
QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Current - Collector Cutoff (Max):
10nA (ICBO)
Manufacturer:
Microsemi Corporation
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This is manufactured by Microsemi Corporation. The manufacturer part number is JANTX2N5796U. The maximum collector current includes 600ma. It features bipolar (bjt) transistor array 2 pnp (dual) 60v 600ma 600mw surface mount 6-smd. Furthermore, 100 @ 150ma, 10v is the minimum DC current gain at given voltage. The transistor is a 2 pnp (dual) type. The product is available in surface mount configuration. The 1.6v @ 50ma, 500ma is the maximum Vce saturation. The product military, mil-prf-19500/496, is a highly preferred choice for users. Moreover, the product comes in 6-smd, no lead. 6-smd is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 60v. In addition, bulk is the available packaging type of the product. The product has -65°c ~ 175°c (tj) operating temperature range. The maximum power of the product is 600mw. Note: qpl or military specs are for reference only. parts are not for military use. see terms and conditions.. In addition, 10na (icbo) is the maximum current at collector cutoff. The microsemi corporation's product offers user-desired applications.

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2N5793,2N5794(U)(Datasheets)

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