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This is manufactured by Microsemi Corporation. The manufacturer part number is JAN2N3811. The maximum collector current includes 50ma. It features bipolar (bjt) transistor array 2 pnp (dual) 60v 50ma 350mw through hole to-78-6. Furthermore, 300 @ 1ma, 5v is the minimum DC current gain at given voltage. The transistor is a 2 pnp (dual) type. The product is available in through hole configuration. The 250mv @ 100µa, 1ma is the maximum Vce saturation. The product military, mil-prf-19500/336, is a highly preferred choice for users. Moreover, the product comes in to-78-6 metal can. to-78-6 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 60v. In addition, bulk is the available packaging type of the product. The product has -65°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 350mw. Note: qpl or military specs are for reference only. parts are not for military use. see terms and conditions.. In addition, 10µa (icbo) is the maximum current at collector cutoff. The microsemi corporation's product offers user-desired applications.
For more information please check the datasheets.
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