Toshiba Semiconductor and Storage ULN2803AFWG,C,EL

ULN2803AFWG-C-EL Toshiba Semiconductor and Storage ULN2803AFWG,C,EL
Toshiba Semiconductor and Storage

Product Information

Current - Collector (Ic) (Max):
500mA
HTSUS:
8541.29.0075
Operating Temperature:
-40°C ~ 85°C (TA)
Package / Case:
18-SOIC (0.295", 7.50mm Width)
DC Current Gain (hFE) (Min) @ Ic, Vce:
1000 @ 350mA, 2V
edacadModel:
ULN2803AFWG,C,EL Models
Frequency - Transition:
-
Vce Saturation (Max) @ Ib, Ic:
1.6V @ 500µA, 350mA
Voltage - Collector Emitter Breakdown (Max):
50V
edacadModelUrl:
/en/models/2183711
Transistor Type:
8 NPN Darlington
Package:
Tape & Reel (TR)
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
-
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
18-SOP
Power - Max:
1.31W
Base Product Number:
ULN2803
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is ULN2803AFWG,C,EL. The maximum collector current includes 500ma. It is assigned with possible HTSUS value of 8541.29.0075. The product has -40°c ~ 85°c (ta) operating temperature range. Moreover, the product comes in 18-soic (0.295", 7.50mm width). Furthermore, 1000 @ 350ma, 2v is the minimum DC current gain at given voltage. The 1.6v @ 500µa, 350ma is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 50v. The transistor is a 8 npn darlington type. It is shipped in tape & reel (tr) package . Its typical moisture sensitivity level is 1 (unlimited). The product is available in surface mount configuration. 18-sop is the supplier device package value. The maximum power of the product is 1.31w. Moreover, it corresponds to uln2803, a base product number of the product. The product is designated with the ear99 code number.

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