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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is ULN2004APG,C,N. The maximum collector current includes 500ma. It is assigned with possible HTSUS value of 8541.29.0075. The product has -40°c ~ 85°c (ta) operating temperature range. Moreover, the product comes in 16-dip (0.300", 7.62mm). Furthermore, 1000 @ 350ma, 2v is the minimum DC current gain at given voltage. The maximum collector emitter breakdown voltage of the product is 50v. The toshiba semiconductor and storage's product offers user-desired applications. The transistor is a 7 npn darlington type. The 1.6v @ 500µa, 350ma is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). In addition, 50µa is the maximum current at collector cutoff. The product is available in through hole configuration. 16-dip is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 1.47w. Moreover, it corresponds to uln2004, a base product number of the product. The product is designated with the ear99 code number.
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