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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is HN4A06J(TE85L,F). Base Part Number: ces388. It features bipolar (bjt) transistor array 2 pnp (dual) matched pair, common emitter 120v 100ma 100mhz 300mw surface mount smv. Furthermore, 200 @ 2ma, 6v is the minimum DC current gain at given voltage. The transistor is a 2 pnp (dual) matched pair, common emitter type. The transition frequency of the product is 100mhz. The product is available in surface mount configuration. The 300mv @ 1ma, 10ma is the maximum Vce saturation. smv is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 120v. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 300mw. Moreover, the product comes in sc-74a, sot-753. The maximum collector current includes 100ma. In addition, 100na (icbo) is the maximum current at collector cutoff. The toshiba semiconductor and storage's product offers user-desired applications.
For more information please check the datasheets.
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