Toshiba Semiconductor and Storage HN2C01FE-GR(T5L,F)

HN2C01FE-GR-T5L-F- Toshiba Semiconductor and Storage HN2C01FE-GR(T5L,F)
Toshiba Semiconductor and Storage

Product Information

Current - Collector (Ic) (Max):
150mA
HTSUS:
8541.21.0095
Operating Temperature:
150°C (TJ)
Package / Case:
SOT-563, SOT-666
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 2mA, 6V
Frequency - Transition:
60MHz
title:
HN2C01FE-GR(T5L,F)
Voltage - Collector Emitter Breakdown (Max):
50V
Manufacturer:
Toshiba Semiconductor and Storage
Transistor Type:
2 NPN (Dual)
Vce Saturation (Max) @ Ib, Ic:
250mV @ 10mA, 100mA
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
100nA (ICBO)
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
ES6
Packaging:
Tape & Reel (TR)
Power - Max:
100mW
Base Product Number:
HN2C01
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is HN2C01FE-GR(T5L,F). The maximum collector current includes 150ma. It is assigned with possible HTSUS value of 8541.21.0095. The product has 150°c (tj) operating temperature range. Moreover, the product comes in sot-563, sot-666. Furthermore, 200 @ 2ma, 6v is the minimum DC current gain at given voltage. The transition frequency of the product is 60mhz. The maximum collector emitter breakdown voltage of the product is 50v. The toshiba semiconductor and storage's product offers user-desired applications. The transistor is a 2 npn (dual) type. The 250mv @ 10ma, 100ma is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in surface mount configuration. es6 is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The maximum power of the product is 100mw. Moreover, it corresponds to hn2c01, a base product number of the product. The product is designated with the ear99 code number.

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