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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is HN1B04FU-Y,LF. The maximum collector current includes 150ma. It is assigned with possible HTSUS value of 8541.21.0075. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 50v. The product has 125°c (tj) operating temperature range. Moreover, the product comes in 6-tssop, sc-88, sot-363. Furthermore, 120 @ 2ma, 6v is the minimum DC current gain at given voltage. The transition frequency of the product is 150mhz. The 250mv @ 10ma, 100ma / 300mv @ 10ma, 100ma is the maximum Vce saturation. In addition, it is reach unaffected. The transistor is a npn, pnp type. It is shipped in tape & reel (tr) package . Its typical moisture sensitivity level is 1 (unlimited). It has a long 40 weeks standard lead time. In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in surface mount configuration. us6 is the supplier device package value. The maximum power of the product is 200mw. Moreover, it corresponds to hn1b04, a base product number of the product. The product is designated with the ear99 code number.
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