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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is HN1B01F-GR(TE85L,F. Base Part Number: rn2104. It features bipolar (bjt) transistor array npn, pnp 50v 150ma 120mhz 300mw surface mount sm6. Furthermore, 200 @ 2ma, 6v is the minimum DC current gain at given voltage. The transistor is a npn, pnp type. The transition frequency of the product is 120mhz. The product is available in surface mount configuration. The 300mv @ 10ma, 100ma is the maximum Vce saturation. sm6 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, cut tape (ct) is the available packaging type of the product. The product has 125°c (tj) operating temperature range. The maximum power of the product is 300mw. Moreover, the product comes in sc-74, sot-457. The maximum collector current includes 150ma. In addition, 100na (icbo) is the maximum current at collector cutoff. The toshiba semiconductor and storage's product offers user-desired applications.
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