Transistor Type:
NPN
Dimensions:
2.2 x 1.35 x 1mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
380 mW
Maximum Collector Emitter Saturation Voltage:
600 mV
Maximum Collector Base Voltage:
80 V
Maximum Collector Emitter Voltage:
65 V
Maximum Base Emitter Saturation Voltage:
950 mV
Maximum Operating Frequency:
100 MHz
Maximum Emitter Base Voltage:
6 V
Package Type:
SOT-363 (SC-88)
Number of Elements per Chip:
2
Maximum DC Collector Current:
100 mA
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Isolated
Manufacturer Standard Lead Time:
52 Weeks
Base Part Number:
NST65011
Detailed Description:
Bipolar (BJT) Transistor Array 2 NPN (Dual) 65V 100mA 100MHz 380mW Surface Mount SC-88 (SOT-363)
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 2mA, 5V
Transistor Type:
2 NPN (Dual)
Frequency - Transition:
100MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
600mV @ 5mA, 100mA
Supplier Device Package:
SC-88 (SOT-363)
Voltage - Collector Emitter Breakdown (Max):
65V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
380mW
Customer Reference:
Package / Case:
6-TSSOP, SC-88, SOT-363
Current - Collector (Ic) (Max):
100mA
Current - Collector Cutoff (Max):
15nA (ICBO)
Manufacturer:
ON Semiconductor
