ON Semiconductor MBT6429DW1T1

MBT6429DW1T1 ON Semiconductor
ON Semiconductor

Product Information

Base Part Number:
MBT6429
Detailed Description:
Bipolar (BJT) Transistor Array 2 NPN (Dual) 45V 200mA 700MHz 150mW Surface Mount SC-88/SC70-6/SOT-363
DC Current Gain (hFE) (Min) @ Ic, Vce:
500 @ 100µA, 5V
Transistor Type:
2 NPN (Dual)
Frequency - Transition:
700MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
600mV @ 5mA, 100mA
Supplier Device Package:
SC-88/SC70-6/SOT-363
Voltage - Collector Emitter Breakdown (Max):
45V
Packaging:
Tape & Reel (TR)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
150mW
Customer Reference:
Package / Case:
6-TSSOP, SC-88, SOT-363
Current - Collector (Ic) (Max):
200mA
Current - Collector Cutoff (Max):
100nA
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is MBT6429DW1T1. Base Part Number: mbt6429. It features bipolar (bjt) transistor array 2 npn (dual) 45v 200ma 700mhz 150mw surface mount sc-88/sc70-6/sot-363. Furthermore, 500 @ 100µa, 5v is the minimum DC current gain at given voltage. The transistor is a 2 npn (dual) type. The transition frequency of the product is 700mhz. The product is available in surface mount configuration. The 600mv @ 5ma, 100ma is the maximum Vce saturation. sc-88/sc70-6/sot-363 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 45v. In addition, tape & reel (tr) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 150mw. Moreover, the product comes in 6-tssop, sc-88, sot-363. The maximum collector current includes 200ma. In addition, 100na is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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Multiple Devices 30/Jun/2006(PCN Obsolescence/ EOL)
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MBT6429DW1T1(Datasheets)

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