Minimum DC Current Gain:
10000
Transistor Type:
NPN
Dimensions:
3 x 1.7 x 1mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
700 mW
Maximum Continuous Collector Current:
1.2 A
Maximum Collector Base Voltage:
30 V
Maximum Collector Emitter Voltage:
30 V
Maximum Collector Cut-off Current:
100nA
Height:
1mm
Width:
1.7mm
Length:
3mm
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Collector Emitter Saturation Voltage:
1.5 V
Maximum Emitter Base Voltage:
10 V
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Single
Base Part Number:
FMBA1
Detailed Description:
Bipolar (BJT) Transistor Array 2 NPN (Dual) 30V 1.2A 1.25MHz 700mW Surface Mount SuperSOT™-6
DC Current Gain (hFE) (Min) @ Ic, Vce:
20000 @ 100mA, 5V
Transistor Type:
2 NPN (Dual)
Frequency - Transition:
1.25MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
1.5V @ 100µA, 100mA
Supplier Device Package:
SuperSOT™-6
Voltage - Collector Emitter Breakdown (Max):
30V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
700mW
Customer Reference:
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Current - Collector (Ic) (Max):
1.2A
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
