ON Semiconductor SMBT3906DW1T1G

SMBT3906DW1T1G ON Semiconductor
SMBT3906DW1T1G
SMBT3906DW1T1G
ET12247856
ET12247856
Transistors - Bipolar (BJT) - Arrays
Transistors - Bipolar (BJT) - Arrays
ON Semiconductor

Product Information

Dimensions:
2.2 x 1.35 x 1mm
Maximum Collector Emitter Saturation Voltage:
-0.4 V
Width:
1.35mm
Automotive Standard:
AEC-Q101
Transistor Configuration:
Isolated
Maximum Operating Frequency:
250 MHz
Package Type:
SOT-363 (SC-88)
Number of Elements per Chip:
2
Maximum Operating Temperature:
+150 °C
Transistor Type:
PNP
Maximum Collector Base Voltage:
-40 V
Maximum Base Emitter Saturation Voltage:
-0.95 V
Maximum Emitter Base Voltage:
-5 V
Length:
2.2mm
Maximum DC Collector Current:
200 mA
Pin Count:
6
Minimum DC Current Gain:
30
Mounting Type:
Surface Mount
Maximum Power Dissipation:
150 mW
Maximum Collector Emitter Voltage:
40 V
Height:
1mm
Minimum Operating Temperature:
-55 °C
Manufacturer Standard Lead Time:
36 Weeks
Base Part Number:
SMBT3906
Detailed Description:
Bipolar (BJT) Transistor Array 2 PNP (Dual) 40V 200mA 250MHz 150mW Surface Mount SOT-363, SC70
Transistor Type:
2 PNP (Dual)
Frequency - Transition:
250MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
400mV @ 5mA, 50mA
Supplier Device Package:
SOT-363, SC70
Voltage - Collector Emitter Breakdown (Max):
40V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
150mW
Customer Reference:
Package / Case:
6-TSSOP, SC-88, SOT-363
Current - Collector (Ic) (Max):
200mA
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 10mA, 1V
Manufacturer:
ON Semiconductor
RoHs Compliant
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is SMBT3906DW1T1G. The given dimensions of the product include 2.2 x 1.35 x 1mm. The product has a maximum -0.4 v collector emitter saturation voltage . Furthermore, the product is 1.35mm wide. The product complies with automotive standard - aec-q101. The product offers isolated transistor configuration. It carries 250 mhz of maximum operating frequency. The package is a sort of sot-363 (sc-88). It consists of 2 elements per chip. It has a maximum operating temperature of +150 °c. The transistor is a pnp type. Additionally, it has -40 v maximum collector base voltage. In addition, the product has a maximum -0.95 v base emitter saturation voltage . It features a -5 v of maximum emitter base voltage. Its accurate length is 2.2mm. Moreover, it has a maximum DC collector current of 200 ma. It contains 6 pins. It features up to 30 of minimum DC current gain. The product is available in surface mount configuration. Provides up to 150 mw maximum power dissipation. Whereas features a 40 v of collector emitter voltage (max). In addition, the height is 1mm. Whereas, the minimum operating temperature of the product is -55 °c. It has typical 36 weeks of manufacturer standard lead time. Base Part Number: smbt3906. It features bipolar (bjt) transistor array 2 pnp (dual) 40v 200ma 250mhz 150mw surface mount sot-363, sc70. The transistor is a 2 pnp (dual) type. The transition frequency of the product is 250mhz. The 400mv @ 5ma, 50ma is the maximum Vce saturation. sot-363, sc70 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 40v. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 150mw. Moreover, the product comes in 6-tssop, sc-88, sot-363. The maximum collector current includes 200ma. Furthermore, 100 @ 10ma, 1v is the minimum DC current gain at given voltage. The on semiconductor's product offers user-desired applications.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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Bond Wire 15/Feb/2019(PCN Assembly/Origin)
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MBT/SMBT3906DW1T1(Datasheets)
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Green Compound Update 04/Mar/2015(PCN Design/Specification)

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