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This is manufactured by Microsemi Corporation. The manufacturer part number is SG2013J-883B. The maximum collector current includes 600ma. It features bipolar (bjt) transistor array 7 npn darlington 50v 600ma through hole 16-cdip. The transistor is a 7 npn darlington type. The product is available in through hole configuration. The 1.9v @ 600µa, 500ma is the maximum Vce saturation. 16-cdip is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, tube is the available packaging type of the product. The product has 150°c (tj) operating temperature range. Furthermore, 900 @ 500ma, 2v is the minimum DC current gain at given voltage. The microsemi corporation's product offers user-desired applications.
For more information please check the datasheets.
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