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United Kingdom
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is HN1B01FU-Y(L,F,T). The maximum collector current includes 150ma. It is assigned with possible HTSUS value of 8541.21.0075. The product is rohs compliant. The product has 125°c (tj) operating temperature range. Moreover, the product comes in 6-tssop, sc-88, sot-363. Furthermore, 120 @ 2ma, 6v is the minimum DC current gain at given voltage. The transition frequency of the product is 120mhz. The 300mv @ 10ma, 100ma is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 50v. The transistor is a npn, pnp type. It is shipped in tape & reel (tr) package . Its typical moisture sensitivity level is 1 (unlimited). In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in surface mount configuration. us6 is the supplier device package value. The maximum power of the product is 200mw. Moreover, it corresponds to hn1b01, a base product number of the product. The product is designated with the ear99 code number.
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