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This is manufactured by Microsemi Corporation. The manufacturer part number is SG2003J-JAN. The maximum collector current includes 500ma. It features bipolar (bjt) transistor array 7 npn darlington 50v 500ma through hole 16-cdip. The transistor is a 7 npn darlington type. The product is available in through hole configuration. The 1.6v @ 500µa, 350ma is the maximum Vce saturation. 16-cdip is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, tube is the available packaging type of the product. The product has 150°c (tj) operating temperature range. Moreover, the product comes in 16-cdip (0.300", 7.62mm). Furthermore, 1000 @ 350ma, 2v is the minimum DC current gain at given voltage. The microsemi corporation's product offers user-desired applications.
For more information please check the datasheets.
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