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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is HN4A51JTE85LF. The maximum collector current includes 100ma. It is assigned with possible HTSUS value of 8541.21.0075. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 120v. The product has 150°c (tj) operating temperature range. Moreover, the product comes in sc-74a, sot-753. Furthermore, 200 @ 2ma, 6v is the minimum DC current gain at given voltage. The transition frequency of the product is 100mhz. In addition, it is reach unaffected. The toshiba semiconductor and storage's product offers user-desired applications. The transistor is a 2 pnp (dual) type. The 300mv @ 1ma, 10ma is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). It has a long 28 weeks standard lead time. In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in surface mount configuration. smv is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The maximum power of the product is 300mw. Moreover, it corresponds to hn4a51, a base product number of the product. The product is designated with the ear99 code number.
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