Nexperia USA Inc. PBSS4032SP,115

PBSS4032SP-115 Nexperia USA Inc. PBSS4032SP,115
Nexperia USA Inc.

Product Information

Base Part Number:
PBSS4032
Detailed Description:
Bipolar (BJT) Transistor Array 2 PNP (Dual) 30V 4.8A 115MHz 2.3W Surface Mount 8-SO
DC Current Gain (hFE) (Min) @ Ic, Vce:
150 @ 2A, 2V
Transistor Type:
2 PNP (Dual)
Frequency - Transition:
115MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
510mV @ 250mA, 5A
Supplier Device Package:
8-SO
Voltage - Collector Emitter Breakdown (Max):
30V
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
Power - Max:
2.3W
Customer Reference:
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Current - Collector (Ic) (Max):
4.8A
Current - Collector Cutoff (Max):
100nA
Manufacturer:
Nexperia USA Inc.
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This is manufactured by Nexperia USA Inc.. The manufacturer part number is PBSS4032SP,115. Base Part Number: pbss4032. It features bipolar (bjt) transistor array 2 pnp (dual) 30v 4.8a 115mhz 2.3w surface mount 8-so. Furthermore, 150 @ 2a, 2v is the minimum DC current gain at given voltage. The transistor is a 2 pnp (dual) type. The transition frequency of the product is 115mhz. The product is available in surface mount configuration. The 510mv @ 250ma, 5a is the maximum Vce saturation. 8-so is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 30v. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 2.3w. Moreover, the product comes in 8-soic (0.154", 3.90mm width). The maximum collector current includes 4.8a. In addition, 100na is the maximum current at collector cutoff. The nexperia usa inc.'s product offers user-desired applications.

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PBSS4032SP(Datasheets)
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Label Chg 12/Mar/2017(PCN Packaging)
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All Dev Label Chgs 2/Aug/2020(PCN Packaging)

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