ON Semiconductor NSVBT2222ADW1T1G

NSVBT2222ADW1T1G ON Semiconductor
ON Semiconductor

Product Information

Base Part Number:
NSVBT2222
Detailed Description:
Bipolar (BJT) Transistor Array 2 NPN (Dual) 40V 600mA 300MHz 150mW Surface Mount SC-88/SC70-6/SOT-363
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 150mA, 10V
Transistor Type:
2 NPN (Dual)
Frequency - Transition:
300MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
1V @ 50mA, 500mA
Supplier Device Package:
SC-88/SC70-6/SOT-363
Voltage - Collector Emitter Breakdown (Max):
40V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
150mW
Customer Reference:
Package / Case:
6-TSSOP, SC-88, SOT-363
Current - Collector (Ic) (Max):
600mA
Current - Collector Cutoff (Max):
10nA (ICBO)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is NSVBT2222ADW1T1G. Base Part Number: nsvbt2222. It features bipolar (bjt) transistor array 2 npn (dual) 40v 600ma 300mhz 150mw surface mount sc-88/sc70-6/sot-363. Furthermore, 100 @ 150ma, 10v is the minimum DC current gain at given voltage. The transistor is a 2 npn (dual) type. The transition frequency of the product is 300mhz. The product is available in surface mount configuration. The 1v @ 50ma, 500ma is the maximum Vce saturation. sc-88/sc70-6/sot-363 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 40v. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 150mw. Moreover, the product comes in 6-tssop, sc-88, sot-363. The maximum collector current includes 600ma. In addition, 10na (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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Mult Dev Wire Qual 29/Aug/2019(PCN Assembly/Origin)
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MBT2222ADW1, NSVBT2222ADW1(Datasheets)

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