Toshiba Semiconductor and Storage HN4C51J(TE85L,F)

HN4C51J-TE85L-F- Toshiba Semiconductor and Storage HN4C51J(TE85L,F)
Toshiba Semiconductor and Storage

Product Information

Current - Collector (Ic) (Max):
100mA
HTSUS:
8541.21.0075
RoHS Status:
RoHS Compliant
Operating Temperature:
150°C (TJ)
Package / Case:
SC-74A, SOT-753
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 2mA, 6V
edacadModel:
HN4C51J(TE85L,F) Models
Frequency - Transition:
100MHz
Vce Saturation (Max) @ Ib, Ic:
300mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max):
120V
edacadModelUrl:
/en/models/4305092
Transistor Type:
2 NPN (Dual) Common Base
Package:
Tape & Reel (TR)
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
52 Weeks
Current - Collector Cutoff (Max):
100nA (ICBO)
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SMV
Power - Max:
300mW
Base Product Number:
HN4C51
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is HN4C51J(TE85L,F). The maximum collector current includes 100ma. It is assigned with possible HTSUS value of 8541.21.0075. The product is rohs compliant. The product has 150°c (tj) operating temperature range. Moreover, the product comes in sc-74a, sot-753. Furthermore, 200 @ 2ma, 6v is the minimum DC current gain at given voltage. The transition frequency of the product is 100mhz. The 300mv @ 1ma, 10ma is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 120v. The transistor is a 2 npn (dual) common base type. It is shipped in tape & reel (tr) package . Its typical moisture sensitivity level is 1 (unlimited). It has a long 52 weeks standard lead time. In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in surface mount configuration. smv is the supplier device package value. The maximum power of the product is 300mw. Moreover, it corresponds to hn4c51, a base product number of the product. The product is designated with the ear99 code number.

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