Transistor Type:
NPN + PNP
Dimensions:
2.9 x 1.6 x 0.9mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
900 mW
Maximum Collector Emitter Saturation Voltage:
-430 (PNP) mV, 190 (NPN) mV
Maximum Collector Base Voltage:
-50 V, 60 V
Maximum Collector Emitter Voltage:
50 V
Maximum Base Emitter Saturation Voltage:
-1.2 (PNP) V, 1.2 (NPN) V
Maximum Operating Frequency:
1 MHz
Maximum Emitter Base Voltage:
-5 (PNP) V, 5 (NPN) V
Package Type:
CPH
Number of Elements per Chip:
2
Maximum DC Collector Current:
1 A
Maximum Operating Temperature:
+150 °C
Pin Count:
5
Transistor Configuration:
Common Base
Base Part Number:
CPH5517
Detailed Description:
Bipolar (BJT) Transistor Array NPN, PNP (Common Base) 50V 1A 420MHz 900mW Surface Mount 5-CPH
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 100mA, 2V
Transistor Type:
NPN, PNP (Common Base)
Frequency - Transition:
420MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
430mV @ 10mA, 500mA
Supplier Device Package:
5-CPH
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
Power - Max:
900mW
Customer Reference:
Package / Case:
SOT-23-5 Thin, TSOT-23-5
Current - Collector (Ic) (Max):
1A
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
