ON Semiconductor NSV60101DMTWTBG

NSV60101DMTWTBG ON Semiconductor
ON Semiconductor

Product Information

Base Part Number:
NSV60101
Detailed Description:
Bipolar (BJT) Transistor Array 2 NPN (Dual) 60V 1A 180MHz 2.27W Surface Mount 6-WDFN (2x2)
DC Current Gain (hFE) (Min) @ Ic, Vce:
120 @ 500mA, 2V
Transistor Type:
2 NPN (Dual)
Frequency - Transition:
180MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
180mV @ 100mA, 1A
Supplier Device Package:
6-WDFN (2x2)
Voltage - Collector Emitter Breakdown (Max):
60V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
2.27W
Customer Reference:
Package / Case:
6-WDFN Exposed Pad
Current - Collector (Ic) (Max):
1A
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is NSV60101DMTWTBG. Base Part Number: nsv60101. It features bipolar (bjt) transistor array 2 npn (dual) 60v 1a 180mhz 2.27w surface mount 6-wdfn (2x2). Furthermore, 120 @ 500ma, 2v is the minimum DC current gain at given voltage. The transistor is a 2 npn (dual) type. The transition frequency of the product is 180mhz. The product is available in surface mount configuration. The 180mv @ 100ma, 1a is the maximum Vce saturation. 6-wdfn (2x2) is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 60v. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 2.27w. Moreover, the product comes in 6-wdfn exposed pad. The maximum collector current includes 1a. In addition, 100na (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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NSS60101DMT(Datasheets)

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Yes. Our products in Transistors - Bipolar (BJT) - Arrays category are shipped in lowest possible time.
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Yes. We ship NSV60101DMTWTBG Internationally to many countries around the world.