Toshiba Semiconductor and Storage HN4B01JE(TE85L,F)

HN4B01JE-TE85L-F- Toshiba Semiconductor and Storage HN4B01JE(TE85L,F)
Toshiba Semiconductor and Storage

Product Information

Current - Collector (Ic) (Max):
150mA
HTSUS:
8541.21.0095
RoHS Status:
RoHS Compliant
Operating Temperature:
150°C (TJ)
Package / Case:
SOT-553
DC Current Gain (hFE) (Min) @ Ic, Vce:
120 @ 2mA, 6V
edacadModel:
HN4B01JE(TE85L,F) Models
Frequency - Transition:
80MHz
Vce Saturation (Max) @ Ib, Ic:
250mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max):
50V
edacadModelUrl:
/en/models/4305090
Transistor Type:
NPN, PNP (Emitter Coupled)
Package:
Tape & Reel (TR)
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
16 Weeks
Current - Collector Cutoff (Max):
100nA (ICBO)
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
ESV
Power - Max:
100mW
Base Product Number:
HN4B01
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is HN4B01JE(TE85L,F). The maximum collector current includes 150ma. It is assigned with possible HTSUS value of 8541.21.0095. The product is rohs compliant. The product has 150°c (tj) operating temperature range. Moreover, the product comes in sot-553. Furthermore, 120 @ 2ma, 6v is the minimum DC current gain at given voltage. The transition frequency of the product is 80mhz. The 250mv @ 10ma, 100ma is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 50v. The transistor is a npn, pnp (emitter coupled) type. It is shipped in tape & reel (tr) package . Its typical moisture sensitivity level is 1 (unlimited). It has a long 16 weeks standard lead time. In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in surface mount configuration. esv is the supplier device package value. The maximum power of the product is 100mw. Moreover, it corresponds to hn4b01, a base product number of the product. The product is designated with the ear99 code number.

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