Minimum DC Current Gain:
120
Transistor Type:
NPN
Dimensions:
1.7 x 1.3 x 0.6mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
357 mW
Maximum Collector Emitter Saturation Voltage:
0.4 V dc
Maximum Collector Base Voltage:
60 V dc
Maximum Collector Emitter Voltage:
50 V
Maximum Operating Frequency:
180 MHz
Height:
0.6mm
Width:
1.3mm
Length:
1.7mm
Package Type:
SOT-563
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum DC Collector Current:
100 mA
Maximum Emitter Base Voltage:
7 V
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Single
Base Part Number:
EMX1DXV6
Detailed Description:
Bipolar (BJT) Transistor Array 2 NPN (Dual) 50V 100mA 180MHz 500mW Surface Mount SOT-563
DC Current Gain (hFE) (Min) @ Ic, Vce:
120 @ 1mA, 6V
Transistor Type:
2 NPN (Dual)
Frequency - Transition:
180MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
400mV @ 5mA, 50mA
Supplier Device Package:
SOT-563
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
500mW
Customer Reference:
Package / Case:
SOT-563, SOT-666
Current - Collector (Ic) (Max):
100mA
Current - Collector Cutoff (Max):
500nA (ICBO)
Manufacturer:
ON Semiconductor
