Minimum DC Current Gain:
200
Transistor Type:
PNP
Dimensions:
2.9 x 1.6 x 0.9mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
1.1 W
Maximum Collector Emitter Saturation Voltage:
-380 mV
Maximum Collector Base Voltage:
-50 V
Maximum Collector Emitter Voltage:
50 V
Maximum Base Emitter Saturation Voltage:
-1.2 V
Maximum Operating Frequency:
420 MHz
Height:
0.9mm
Width:
1.6mm
Length:
2.9mm
Package Type:
CPH
Number of Elements per Chip:
2
Maximum DC Collector Current:
1 A
Maximum Emitter Base Voltage:
-5 V
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Isolated
Base Part Number:
CPH653
Detailed Description:
Bipolar (BJT) Transistor Array 2 PNP (Dual) 50V 1A 420MHz 1.1W Surface Mount 6-CPH
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 100mA, 2V
Transistor Type:
2 PNP (Dual)
Frequency - Transition:
420MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
380mV @ 10mA, 500mA
Supplier Device Package:
6-CPH
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
Power - Max:
1.1W
Customer Reference:
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Current - Collector (Ic) (Max):
1A
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
