Transistor Type:
NPN + PNP
Dimensions:
5 x 4 x 1.5mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
783 mW
Maximum Collector Emitter Saturation Voltage:
0.115 V
Maximum Collector Base Voltage:
-40 V, 40 V
Maximum Collector Emitter Voltage:
40 V
Maximum Base Emitter Saturation Voltage:
0.9 V
Maximum Operating Frequency:
100 MHz
Maximum Emitter Base Voltage:
-7 V, 6 V
Package Type:
SOIC
Number of Elements per Chip:
2
Maximum DC Collector Current:
3 A
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Isolated
Manufacturer Standard Lead Time:
2 Weeks
Base Part Number:
NSS403
Detailed Description:
Bipolar (BJT) Transistor Array NPN, PNP 40V 3A 100MHz 653mW Surface Mount 8-SOIC
DC Current Gain (hFE) (Min) @ Ic, Vce:
180 @ 1A, 2V
Transistor Type:
NPN, PNP
Frequency - Transition:
100MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
115mV @ 200mA, 2A
Supplier Device Package:
8-SOIC
Voltage - Collector Emitter Breakdown (Max):
40V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
653mW
Customer Reference:
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Current - Collector (Ic) (Max):
3A
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
