ON Semiconductor NST857BDP6T5G

NST857BDP6T5G ON Semiconductor
ON Semiconductor

Product Information

Base Part Number:
NST857
Detailed Description:
Bipolar (BJT) Transistor Array 2 PNP (Dual) 45V 100mA 100MHz 350mW Surface Mount SOT-963
DC Current Gain (hFE) (Min) @ Ic, Vce:
220 @ 2mA, 5V
Transistor Type:
2 PNP (Dual)
Frequency - Transition:
100MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
700mV @ 5mA, 100mA
Supplier Device Package:
SOT-963
Voltage - Collector Emitter Breakdown (Max):
45V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
350mW
Customer Reference:
Package / Case:
SOT-963
Current - Collector (Ic) (Max):
100mA
Current - Collector Cutoff (Max):
15nA (ICBO)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is NST857BDP6T5G. Base Part Number: nst857. It features bipolar (bjt) transistor array 2 pnp (dual) 45v 100ma 100mhz 350mw surface mount sot-963. Furthermore, 220 @ 2ma, 5v is the minimum DC current gain at given voltage. The transistor is a 2 pnp (dual) type. The transition frequency of the product is 100mhz. The product is available in surface mount configuration. The 700mv @ 5ma, 100ma is the maximum Vce saturation. sot-963 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 45v. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 350mw. Moreover, the product comes in sot-963. The maximum collector current includes 100ma. In addition, 15na (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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NST857BDP6T5G(Datasheets)
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Wire Bond 01/Dec/2010(PCN Design/Specification)

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Yes. We ship NST857BDP6T5G Internationally to many countries around the world.