This is manufactured by Central Semiconductor Corp. The manufacturer part number is MPQ6002. The maximum collector current includes 500ma. It features bipolar (bjt) transistor array 2 npn, 2 pnp 30v 500ma 200mhz 650mw through hole to-116. Furthermore, 30 @ 300ma, 10v is the minimum DC current gain at given voltage. The transistor is a 2 npn, 2 pnp type. The transition frequency of the product is 200mhz. The product is available in through hole configuration. The 1.4v @ 30ma, 300ma is the maximum Vce saturation. to-116 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 30v. In addition, tube is the available packaging type of the product. The product has -65°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 650mw. Moreover, the product comes in 14-dip (0.300", 7.62mm). In addition, 30na (icbo) is the maximum current at collector cutoff. The central semiconductor corp's product offers user-desired applications.
MPQ6002, 6502(Datasheets)
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We accept all major payment methods for all products including ET10924430. Please check your shopping cart at the time of order.
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You can order Central Semiconductor Corp brand products with MPQ6002 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Transistors - Bipolar (BJT) - Arrays category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Central Semiconductor Corp MPQ6002. You can also check on our website or by contacting our customer support team for further order details on Central Semiconductor Corp MPQ6002.
This is manufactured by Central Semiconductor Corp. The manufacturer part number is MPQ6002. The maximum collector current includes 500ma. It features bipolar (bjt) transistor array 2 npn, 2 pnp 30v 500ma 200mhz 650mw through hole to-116. Furthermore, 30 @ 300ma, 10v is the minimum DC current gain at given voltage. The transistor is a 2 npn, 2 pnp type. The transition frequency of the product is 200mhz. The product is available in through hole configuration. The 1.4v @ 30ma, 300ma is the maximum Vce saturation. to-116 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 30v. In addition, tube is the available packaging type of the product. The product has -65°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 650mw. Moreover, the product comes in 14-dip (0.300", 7.62mm). In addition, 30na (icbo) is the maximum current at collector cutoff. The central semiconductor corp's product offers user-desired applications.
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