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This is manufactured by Microsemi Corporation. The manufacturer part number is 2N6989. The maximum collector current includes 800ma. It features bipolar (bjt) transistor array 4 npn (quad) 50v 800ma 1.5w through hole to-116. Furthermore, 100 @ 150ma, 10v is the minimum DC current gain at given voltage. The transistor is a 4 npn (quad) type. The product is available in through hole configuration. The 1v @ 50ma, 500ma is the maximum Vce saturation. to-116 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, bulk is the available packaging type of the product. The product has -65°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 1.5w. Moreover, the product comes in 14-dip (0.300", 7.62mm). In addition, 10µa (icbo) is the maximum current at collector cutoff. The microsemi corporation's product offers user-desired applications.
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