Toshiba Semiconductor and Storage RN2910,LXHF(CT

RN2910-LXHF-CT Toshiba Semiconductor and Storage RN2910,LXHF(CT
Toshiba Semiconductor and Storage

Product Information

Current - Collector (Ic) (Max):
100mA
HTSUS:
8541.21.0075
Resistor - Base (R1):
4.7kOhms
Resistor - Emitter Base (R2):
-
Package / Case:
6-TSSOP, SC-88, SOT-363
DC Current Gain (hFE) (Min) @ Ic, Vce:
120 @ 1mA, 5V
Frequency - Transition:
200MHz
Vce Saturation (Max) @ Ib, Ic:
300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max):
50V
Transistor Type:
2 PNP - Pre-Biased (Dual)
Package:
Tape & Reel (TR)
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
12 Weeks
Current - Collector Cutoff (Max):
100nA (ICBO)
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
US6
Power - Max:
200mW
Base Product Number:
RN2910
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is RN2910,LXHF(CT. The maximum collector current includes 100ma. It is assigned with possible HTSUS value of 8541.21.0075. Resistor - Base - 4.7kohms. Moreover, the product comes in 6-tssop, sc-88, sot-363. Furthermore, 120 @ 1ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 200mhz. The 300mv @ 250µa, 5ma is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 50v. The transistor is a 2 pnp - pre-biased (dual) type. It is shipped in tape & reel (tr) package . Its typical moisture sensitivity level is 1 (unlimited). It has a long 12 weeks standard lead time. In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in surface mount configuration. us6 is the supplier device package value. The maximum power of the product is 200mw. Moreover, it corresponds to rn2910, a base product number of the product. The product is designated with the ear99 code number.

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Yes. Our products in Bipolar Transistor Arrays, Pre-Biased category are shipped in lowest possible time.
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