onsemi NSVMUN5312DW1T3G

NSVMUN5312DW1T3G onsemi
NSVMUN5312DW1T3G
onsemi

Product Information

Resistor - Base (R1):
22kOhms
Current - Collector (Ic) (Max):
100mA
HTSUS:
8541.21.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
50V
Resistor - Emitter Base (R2):
22kOhms
Package / Case:
6-TSSOP, SC-88, SOT-363
DC Current Gain (hFE) (Min) @ Ic, Vce:
60 @ 5mA, 10V
Frequency - Transition:
-
REACH Status:
REACH Unaffected
edacadModel:
NSVMUN5312DW1T3G Models
edacadModelUrl:
/en/models/5257379
Manufacturer:
onsemi
Transistor Type:
1 NPN, 1 PNP - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic:
250mV @ 300µA, 10mA
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Qualification:
AEC-Q101
standardLeadTime:
9 Weeks
Current - Collector Cutoff (Max):
500nA
Mounting Type:
Surface Mount
Grade:
Automotive
Series:
-
Supplier Device Package:
SC-88/SC70-6/SOT-363
Packaging:
Tape & Reel (TR)
Power - Max:
250mW
Base Product Number:
NSVMUN5312
ECCN:
EAR99
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This is manufactured by onsemi. The manufacturer part number is NSVMUN5312DW1T3G. Resistor - Base - 22kohms. The maximum collector current includes 100ma. It is assigned with possible HTSUS value of 8541.21.0095. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 50v. Resistor - Emittor Base (R2) - 22kohms. Moreover, the product comes in 6-tssop, sc-88, sot-363. Furthermore, 60 @ 5ma, 10v is the minimum DC current gain at given voltage. In addition, it is reach unaffected. The onsemi's product offers user-desired applications. The transistor is a 1 npn, 1 pnp - pre-biased (dual) type. The 250mv @ 300µa, 10ma is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). It has a long 9 weeks standard lead time. In addition, 500na is the maximum current at collector cutoff. The product is available in surface mount configuration. The product is automotive, a grade of class. sc-88/sc70-6/sot-363 is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The maximum power of the product is 250mw. Moreover, it corresponds to nsvmun5312, a base product number of the product. The product is designated with the ear99 code number.

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Bond Wire 15/Feb/2019(PCN Assembly/Origin)
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MUN5312DW1, NSBC124EPDxx(Datasheets)
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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)

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FAQs

Yes. You can also search NSVMUN5312DW1T3G on website for other similar products.
We accept all major payment methods for all products including ET21571783. Please check your shopping cart at the time of order.
You can order onsemi brand products with NSVMUN5312DW1T3G directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Transistors - Bipolar (BJT) - Arrays, Pre-Biased category are shipped in lowest possible time.
You will get a confirmation email regarding your order of onsemi NSVMUN5312DW1T3G. You can also check on our website or by contacting our customer support team for further order details on onsemi NSVMUN5312DW1T3G.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET21571783 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "onsemi" products on our website by using Enrgtech's Unique Manufacturing Part Number ET21571783.
Yes. We ship NSVMUN5312DW1T3G Internationally to many countries around the world.