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This is manufactured by onsemi. The manufacturer part number is NSVB123JPDXV6T1G. Resistor - Base - 2.2kohms. It is assigned with possible HTSUS value of 8541.21.0095. The maximum collector current includes 100ma. The maximum collector emitter breakdown voltage of the product is 50v. Resistor - Emittor Base (R2) - 4.7kohms. Moreover, the product comes in sot-563, sot-666. Furthermore, 80 @ 5ma, 10v is the minimum DC current gain at given voltage. The 250mv @ 300µa, 10ma is the maximum Vce saturation. In addition, it is reach unaffected. The transistor is a 1 npn, 1 pnp - pre-biased (dual) type. It is shipped in tape & reel (tr) package . Its typical moisture sensitivity level is 1 (unlimited). In addition, 500na is the maximum current at collector cutoff. The product is available in surface mount configuration. sot-563 is the supplier device package value. The maximum power of the product is 500mw. Moreover, it corresponds to nsvb12, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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