Toshiba Semiconductor and Storage RN1710JE(TE85L,F)

RN1710JE-TE85L-F- Toshiba Semiconductor and Storage RN1710JE(TE85L,F)
Toshiba Semiconductor and Storage

Product Information

Resistor - Base (R1):
4.7kOhms
HTSUS:
8541.21.0075
Current - Collector (Ic) (Max):
100mA
Resistor - Emitter Base (R2):
-
Package / Case:
SOT-553
DC Current Gain (hFE) (Min) @ Ic, Vce:
120 @ 1mA, 5V
Frequency - Transition:
250MHz
Vce Saturation (Max) @ Ib, Ic:
300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max):
50V
Transistor Type:
2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Package:
Tape & Reel (TR)
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
32 Weeks
Current - Collector Cutoff (Max):
100nA (ICBO)
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
ESV
Power - Max:
100mW
Base Product Number:
RN1710
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is RN1710JE(TE85L,F). Resistor - Base - 4.7kohms. It is assigned with possible HTSUS value of 8541.21.0075. The maximum collector current includes 100ma. Moreover, the product comes in sot-553. Furthermore, 120 @ 1ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 250mhz. The 300mv @ 250µa, 5ma is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 50v. The transistor is a 2 npn - pre-biased (dual) (emitter coupled) type. It is shipped in tape & reel (tr) package . Its typical moisture sensitivity level is 1 (unlimited). It has a long 32 weeks standard lead time. In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in surface mount configuration. esv is the supplier device package value. The maximum power of the product is 100mw. Moreover, it corresponds to rn1710, a base product number of the product. The product is designated with the ear99 code number.

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Yes. Our products in Bipolar Transistor Arrays, Pre-Biased category are shipped in lowest possible time.
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