ON Semiconductor NSBC143EPDXV6T1G

NSBC143EPDXV6T1G ON Semiconductor
ON Semiconductor

Product Information

Base Part Number:
NSBC143
Detailed Description:
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563
DC Current Gain (hFE) (Min) @ Ic, Vce:
15 @ 5mA, 10V
Transistor Type:
1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type:
Surface Mount
Resistor - Base (R1):
4.7kOhms
Vce Saturation (Max) @ Ib, Ic:
250mV @ 1mA, 10mA
Supplier Device Package:
SOT-563
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Tape & Reel (TR)
Resistor - Emitter Base (R2):
4.7kOhms
Power - Max:
500mW
Customer Reference:
Package / Case:
SOT-563, SOT-666
Current - Collector (Ic) (Max):
100mA
Current - Collector Cutoff (Max):
500nA
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is NSBC143EPDXV6T1G. Base Part Number: nsbc143. It features pre-biased bipolar transistor (bjt) 1 npn, 1 pnp - pre-biased (dual) 50v 100ma 500mw surface mount sot-563. Furthermore, 15 @ 5ma, 10v is the minimum DC current gain at given voltage. The transistor is a 1 npn, 1 pnp - pre-biased (dual) type. The product is available in surface mount configuration. Resistor - Base - 4.7kohms. The 250mv @ 1ma, 10ma is the maximum Vce saturation. sot-563 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, tape & reel (tr) is the available packaging type of the product. Resistor - Emittor Base (R2) - 4.7kohms. The maximum power of the product is 500mw. Moreover, the product comes in sot-563, sot-666. The maximum collector current includes 100ma. In addition, 500na is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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Mult Dev 24/Apr/2020(PCN Assembly/Origin)
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MUN5332DW1, NSBC143EPDxx(Datasheets)
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Carrier Tape 15/Aug/2017(PCN Packaging)
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Mult Devices 27/Oct/2017(PCN Packaging)

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