ON Semiconductor NSBA114TDXV6T1G

NSBA114TDXV6T1G ON Semiconductor
ON Semiconductor

Product Information

Base Part Number:
NSBA114
Detailed Description:
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563
DC Current Gain (hFE) (Min) @ Ic, Vce:
160 @ 5mA, 10V
Transistor Type:
2 PNP - Pre-Biased (Dual)
Mounting Type:
Surface Mount
Resistor - Base (R1):
10kOhms
Vce Saturation (Max) @ Ib, Ic:
250mV @ 1mA, 10mA
Supplier Device Package:
SOT-563
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Cut Tape (CT)
Power - Max:
500mW
Customer Reference:
Package / Case:
SOT-563, SOT-666
Current - Collector (Ic) (Max):
100mA
Current - Collector Cutoff (Max):
500nA
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is NSBA114TDXV6T1G. Base Part Number: nsba114. It features pre-biased bipolar transistor (bjt) 2 pnp - pre-biased (dual) 50v 100ma 500mw surface mount sot-563. Furthermore, 160 @ 5ma, 10v is the minimum DC current gain at given voltage. The transistor is a 2 pnp - pre-biased (dual) type. The product is available in surface mount configuration. Resistor - Base - 10kohms. The 250mv @ 1ma, 10ma is the maximum Vce saturation. sot-563 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, cut tape (ct) is the available packaging type of the product. The maximum power of the product is 500mw. Moreover, the product comes in sot-563, sot-666. The maximum collector current includes 100ma. In addition, 500na is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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Mult Dev 24/Apr/2020(PCN Assembly/Origin)
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MUN5115DW1, NSBA114TDxx(Datasheets)
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Multiple Devices 30/Jun/2006(PCN Obsolescence/ EOL)
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Carrier Tape 15/Aug/2017(PCN Packaging)
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Mult Devices 27/Oct/2017(PCN Packaging)

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FAQs

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