Toshiba Semiconductor and Storage RN1711JE(TE85L,F)

RN1711JE-TE85L-F- Toshiba Semiconductor and Storage RN1711JE(TE85L,F)
Toshiba Semiconductor and Storage

Product Information

Resistor - Base (R1):
10kOhms
Current - Collector (Ic) (Max):
100mA
HTSUS:
8541.21.0075
RoHS Status:
ROHS3 Compliant
Resistor - Emitter Base (R2):
-
Package / Case:
SOT-553
DC Current Gain (hFE) (Min) @ Ic, Vce:
120 @ 1mA, 5V
edacadModel:
RN1711JE(TE85L,F) Models
Frequency - Transition:
250MHz
Vce Saturation (Max) @ Ib, Ic:
300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max):
50V
edacadModelUrl:
/en/models/10379861
Transistor Type:
2 NPN - Pre-Biased (Dual)
Package:
Tape & Reel (TR)
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
16 Weeks
Current - Collector Cutoff (Max):
100nA (ICBO)
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
ESV
Power - Max:
100mW
Base Product Number:
RN1711
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is RN1711JE(TE85L,F). Resistor - Base - 10kohms. The maximum collector current includes 100ma. It is assigned with possible HTSUS value of 8541.21.0075. The product is rohs3 compliant. Moreover, the product comes in sot-553. Furthermore, 120 @ 1ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 250mhz. The 300mv @ 250µa, 5ma is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 50v. The transistor is a 2 npn - pre-biased (dual) type. It is shipped in tape & reel (tr) package . Its typical moisture sensitivity level is 1 (unlimited). It has a long 16 weeks standard lead time. In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in surface mount configuration. esv is the supplier device package value. The maximum power of the product is 100mw. Moreover, it corresponds to rn1711, a base product number of the product. The product is designated with the ear99 code number.

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