Resistor - Base (R1):
4.7kOhms, 1kOhms
Detailed Description:
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 150MHz, 80MHz 150mW Surface Mount SMINI6-G1
DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 5mA, 10V / 30 @ 5mA, 10V
Transistor Type:
1 NPN, 1 PNP - Pre-Biased (Dual)
Frequency - Transition:
150MHz, 80MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
250mV @ 300µA, 10mA
Supplier Device Package:
SMINI6-G1
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Cut Tape (CT)
Resistor - Emitter Base (R2):
47kOhms, 10kOhms
Power - Max:
150mW
Customer Reference:
Package / Case:
6-TSSOP, SC-88, SOT-363
Current - Collector (Ic) (Max):
100mA
Current - Collector Cutoff (Max):
500nA
Manufacturer:
Panasonic Electronic Components