Toshiba Semiconductor and Storage RN2962FE(TE85L,F)

RN2962FE-TE85L-F- Toshiba Semiconductor and Storage RN2962FE(TE85L,F)
Toshiba Semiconductor and Storage

Product Information

Resistor - Base (R1):
10kOhms
HTSUS:
8541.21.0095
Current - Collector (Ic) (Max):
100mA
Resistor - Emitter Base (R2):
1kOhms
Package / Case:
SOT-563, SOT-666
DC Current Gain (hFE) (Min) @ Ic, Vce:
50 @ 10mA, 5V
Frequency - Transition:
200MHz
Vce Saturation (Max) @ Ib, Ic:
300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max):
50V
Transistor Type:
2 PNP - Pre-Biased (Dual)
Package:
Tape & Reel (TR)
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
100nA (ICBO)
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
ES6
Power - Max:
100mW
Base Product Number:
RN2962
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is RN2962FE(TE85L,F). Resistor - Base - 10kohms. It is assigned with possible HTSUS value of 8541.21.0095. The maximum collector current includes 100ma. Resistor - Emittor Base (R2) - 1kohms. Moreover, the product comes in sot-563, sot-666. Furthermore, 50 @ 10ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 200mhz. The 300mv @ 250µa, 5ma is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 50v. The transistor is a 2 pnp - pre-biased (dual) type. It is shipped in tape & reel (tr) package . Its typical moisture sensitivity level is 1 (unlimited). In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in surface mount configuration. es6 is the supplier device package value. The maximum power of the product is 100mw. Moreover, it corresponds to rn2962, a base product number of the product. The product is designated with the ear99 code number.

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Yes. Our products in Bipolar Transistor Arrays, Pre-Biased category are shipped in lowest possible time.
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